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| 2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5287 900 550 7 5(Pulse10) 2.5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) 2SC5287 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V MHz pF 5.450.1 B C E 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1.8A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A VCE=12V, IE=-0.35A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 Unit A A V 19.90.3 4.0 a b o3.20.1 V 2 3 1.05 +0.2 -0.1 5.450.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 139 IC (A) 1.8 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.27 IB2 (A) -0.9 ton (s) 0.7max tstg (s) 4.0max tf (s) 0.5max Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 5 0 70 mA 600mA VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at )( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 1.5 IC/I B= 5 Const. I C - VBE Temperature Characteristics (Typical) (V C E= 4V) 7 4 Collector Current I C (A) 400 mA 6 Collector Current I C (A) 0.5 1 57 5 250 mA 3 1.0 V B E( sat) 4 150 mA 2 3 0.5 I B =50mA 2 1 1 V C E( sat) 0 0.03 0.05 0.1 0 0 0.5 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 40 DC Cur rent Gain h F E j - a( C/W) hFE - IC Characteristics (Typical) ton*t st g*t f ( s) 125C 25C 6 5 ton*t stg * tf - IC Characteristics (Typical) j-a - t Characteristics 3 V C C 250V IC:I B1: I B2= 1:0.15:-0.5 1 0.5 ton 0.1 0.2 tf t s tg 10 Swi tchi ng T im e -55C Transient Thermal Resistance 1 0.5 5 4 0.02 0.05 0.1 0.5 1 5 10 0.5 1 5 0.3 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 10 Reverse Bias Safe Operating Area 20 80 P c - T a Derating 50 0 s 5 Co lle ctor Cu rre nt I C (A) 5 Co lle ctor Cu rre nt I C (A) Ma xim um Powe r Dissipat io n P C( W) s 10 60 W ith In fin ite 1 0.5 1 0.5 Without Heatsink Natural Cooling IB2=-1.0A L=3mH Duty:less than 1% he 40 at si nk Without Heatsink Natural Cooling 0.1 0.05 0.03 10 50 100 500 20 0.1 0.05 0.03 50 Without Heatsink 100 500 1000 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 133 |
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